NTS10100EMFST3G datasheet(3/5 Pages) ONSEMI

номер детали	NTS10100EMFST3G

подробное описание детали	Very Low Leakage Trench-based Schottky Rectifier

PDF	5 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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NTS10100EMFS, NRVTS10100EMFS

http://onsemi.com

TYPICAL CHARACTERISTICS

100 110 120 130 140 150 160 170

100

1,000

10,000

0.1

100

1.E−07

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

20304050

60708090

100

0.1

1.0

10.0

100.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

0.1

1.0

10.0

100.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Figure 1. Typical Instantaneous Forward

Characteristics

Figure 2. Maximum Instantaneous Forward

Characteristics

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 3. Typical Reverse Characteristics

Figure 4. Maximum Reverse Characteristics

VR, INSTANTANEOUS REVERSE VOLTAGE (V)

Figure 5. Typical Junction Capacitance

Figure 6. Current Derating

VR, REVERSE VOLTAGE (V)

TC, CASE TEMPERATURE (°C)

TA = 125°C

TA = 150°C

TA = 25°C

TJ = 25°C

RqJC = 2.0°C/W

Square Wave

TA = 175°C

TA = −55°C

TA = 25°C

TA = −55°C

TA = 125°C

TA = 150°C

TA = 175°C

TA = 150°C

TA = 125°C

TA = 25°C

1.E−07

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

2030405060

708090 100

TA = 150°C

TA = 175°C

TA = 125°C

TA = 25°C

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