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NTMFS6B05N датащи(PDF) 4 Page - ON Semiconductor

номер детали NTMFS6B05N
подробное описание детали  Single N-Channel Power MOSFET
PDF  6 Pages
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NTMFS6B05N датащи(HTML) 4 Page - ON Semiconductor

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TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
10
1
1
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
10
1
1
10
100
1000
0.9
0.8
0.7
0.6
0.4
0.3
0
5
10
25
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
Coss
Crss
QT
VDS = 50 V
ID = 25 A
VGS = 10 V
td(on)
tr
tf
TJ = 25°C
10
100
1.0
0
2
12
020
5
25
40
45
TJ = 25°C
VDS = 50 V
ID = 25 A
30
40
50
30
10
10,000
6
8
10
4
Qgs
Qgd
td(off)
0.5
15
20
35
45
100
1000
15
35
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
10
1
0.1
0.01
0.1
1
10
100
1000
VGS ≤ 10 V
Single Pulse
TC = 25°C
500
ms
1 ms
10 ms
RDS(on) Limit
Thermal Limit
Package Limit



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