© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 4

1

Publication Order Number:

MPF930/D

MPF930

TMOS Switching

N−Channel — Enhancement

MAXIMUM RATINGS

Rating

Symbol MPF930 MPF960 MPF990

Unit

Drain−Source Voltage

35

60

90

Vdc

Drain−Gate Voltage

35

60

90

Vdc

Gate−Source Voltage

— Continuous

— Non−repetitive

± 20

± 40

Vdc

Vpk

Drain Current

2.0

3.0

Adc

Total Device Dissipation

Derate above 25°C

1.0

8.0

W

mW/°C

Operating and Storage

Junction

Temperature Range

−55 to 150

°C

Thermal Resistance

125

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

MPF930

MPF960

MPF990

35

60

90

—

—

—

—

—

—

Vdc

—

—

50

nAdc

Zero−Gate−Voltage Drain Current

—

—

10

μAdc

Gate Threshold Voltage

1.0

—

3.5

Vdc

MPF930

MPF960

MPF990

MPF930

MPF960

MPF990

MPF930

MPF960

MPF990

—

—

—

—

—

—

—

—

—

0.4

0.6

0.6

0.9

1.2

1.2

2.2

2.8

2.8

0.7

0.8

1.2

1.4

1.7

2.4

3.0

3.5

4.8

Vdc

1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

http://onsemi.com

CASE 29−05, STYLE 22

TO−92 (TO−226AE)

1

2

3

3 DRAIN

1 SOURCE

2

GATE