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SB2003M датащи(PDF) 2 Page - ON Semiconductor

номер детали SB2003M
подробное описание детали  Schottky Barrier Diode
PDF  4 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SB2003M датащи(HTML) 2 Page - ON Semiconductor

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SB2003M
No.8371-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Reverse Voltage
VR
IR=0.2mA
30
V
Forward Voltage
VF
IF=1.0A
0.40
0.45
V
IF=2.0A
0.45
0.50
V
Reverse Current
IR
VR=15V
30
µA
Interterminal Capacitance
C
VR=10V, f=1MHz
75
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
20
ns
Thermal Resistance
Rth(j-a)1
When mounted in Cu-foiled area of
1.44mm2
×0.03mm on glass epoxy substrate
93.4
°C / W
Rth(j-a)2
When mounted on ceramic substrate (500mm2
×0.8mm)
71.4
°C / W
trr Test Cicuit
Ordering Information
Device
Package
Shipping
memo
SB2003M-TL-E
MCPH6
3,000pcs./reel
Pb-Free
SB2003M-TL-W
MCPH6
3,000pcs./reel
Pb-Free and Halogen Free
Duty≤10%
50Ω
100Ω
10Ω
--5V
trr
10µs
00.2
0.3
0.10.4
0.50.6
5
7
7
3
2
5
3
2
5
7
3
2
1.0
0.1
0.01
Forward Voltage, VF -- V
IF -- VF
IT08588
Reverse Voltage, VR -- V
IR -- VR
IT08589
0
2
3
57
0.000001
0.00001
2
3
57
0.0001
2
3
57
0.001
2
3
57
0.01
2
3
57
0.1
2
3
57
1.0
2
3
57
10
5101520253035
Ta=125°C
100°C
75°C
50°C
25°C
0°C
--25°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.



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