MTSF3N02HD datasheet(7/12 Pages) ONSEMI

номер детали	MTSF3N02HD

подробное описание детали	N?묬hannel Power MOSFET

PDF	12 Pages

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производитель	ONSEMI [ON Semiconductor]

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MTSF3N02HD

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t, TIME

Figure 13. Reverse Recovery Time (trr)

di/dt = 300 A/

μs

Standard Cell Density

High Cell Density

trr

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define the

maximum simultaneous drain−to−source voltage and drain

current that a transistor can handle safely when it is forward

biased. Curves are based upon maximum peak junction

temperature and a case temperature (TC) of 25°C. Peak

repetitive pulsed power limits are determined by using the

thermal response data in conjunction with the procedures

discussed in AN569, “Transient Thermal Resistance − General

Data and Its Use.”

Switching between the off−state and the on−state may

traverse any load line provided neither rated peak current

(IDM) nor rated voltage (VDSS) is exceeded, and that the

transition time (tr, tf) does not exceed 10 μs. In addition

the total power averaged over a complete switching cycle

must not exceed (TJ(MAX) − TC)/(RθJC).

Figure 14. Maximum Rated Forward Biased

Safe Operating Area

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.01

VGS = 8 V

SINGLE PULSE

TC = 25°C

0.1

10 ms

100

1 ms

100

μs

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