MTP30P06VG datasheet(3/7 Pages) ONSEMI

номер детали	MTP30P06VG

подробное описание детали	P?묬hannel Power MOSFET

PDF	7 Pages

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производитель	ONSEMI [ON Semiconductor]

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MTP30P06V

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TYPICAL ELECTRICAL CHARACTERISTICS

024

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

234

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

010

0.02

0.04

0.06

0.12

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1020

3040

100

Figure 5. On−Resistance Variation with

Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

TJ = 125°C

100

°C

TJ = 25°C

VDS ≥ 10 V

TJ = −55°C

°C

100°C

TJ = 100°C

°C

−55

°C

VGS = 0 V

VGS = 10V

VGS = 10 V

7 V

6 V

5 V

4 V

8 V

9 V

0.08

0.1

010

0.04

0.05

0.08

ID, DRAIN CURRENT (AMPS)

15 V

TJ = 25°C

VGS = 10 V

0.06

0.07

−50

0.2

0.4

0.6

1.8

TJ, JUNCTION TEMPERATURE (°C)

−25

100

150

VGS = 10 V

ID = 15 A

0.8

1.2

1.4

1.6

125

175

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