MMDF4P03HDR2 datasheet(2/8 Pages) ONSEMI

2 / 8 page

MMDF4P03HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

V(BR)DSS

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 24 Vdc, VGS = 0 Vdc)

(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

μAdc

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

Vdc

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 3.5 Adc)

(VGS = 4.5 Vdc, ID = 2.0 Adc)

RDS(on)

−

0.075

0.125

0.085

0.16

Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)

gFS

−

6.0

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 24 Vdc,

VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

425

600

Output Capacitance

Coss

−

209

300

Transfer Capacitance

Crss

−

57.2

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

(VDD = 15 Vdc,

VGS = 10 Vdc,

ID = 1.0 Adc,

RG = 6.0 Ω)

td(on)

−

11.7

23.4

Rise Time

−

15.8

31.6

Turn−Off Delay Time

td(off)

−

167.3

334.6

Fall Time

−

102.6

205.2

Gate Charge

(See Figure 8)

(VDS = 10 Vdc,

ID = 3.5 Adc,

VGS = 10 Vdc)

−

14.8

29.6

−

1.7

−

4.7

−

3.42

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 1.7 Adc, VGS = 0 Vdc)

(IS = 1.7 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

−

0.9

0.7

1.2

−

Vdc

Reverse Recovery Time

(IS = 3.5 Adc,

VGS = 0 Vdc,

dIS/dt = 100 A/μs)

trr

−

77.4

−

19.9

−

57.5

−

Reverse Recovery Stored Charge

QRR

−

0.088

−

μC

2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

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