MMDF2C02E datasheet(3/10 Pages) ONSEMI

номер детали	MMDF2C02E

подробное описание детали	Power MOSFET

PDF	10 Pages

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производитель	ONSEMI [ON Semiconductor]

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MMDF2C02E

http://onsemi.com

ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 6)

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS − continued (Note 8)

Total Gate Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

(N)

(P)

−

10.6

Gate−Source Charge

(N)

(P)

−

1.3

1.0

−

Gate−Drain Charge

(N)

(P)

−

2.9

3.5

−

(N)

(P)

−

2.7

3.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage (Note 7)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

(N)

(P)

−

1.0

1.5

1.4

2.0

Vdc

Reverse Recovery Time

see Figure 7

(IF = IS,

dIS/dt = 100 A/ms)

trr

(N)

(P)

−

(N)

(P)

−

(N)

(P)

−

QRR

(N)

(P)

−

0.025

0.035

−

6. Negative signs for P−Channel device omitted for clarity.

7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

8. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

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