© Semiconductor Components Industries, LLC, 2015

May, 2015 − Rev. 2

1

Publication Order Number:

NTP8G206N/D

NTP8G206N

Power GaN Cascode

Transistor 600 V, 150 mW

Features

Compliant

Parameter

Symbol

NDD

Unit

Drain−to−Source Voltage

600

V

Gate−to−Source Voltage

±18

V

Continuous Drain

Steady

State

17

A

12

Power Dissipation –

Steady

State

96

W

Pulsed Drain

Current

60

A

Operating Junction and Storage

Temperature

−55 to

+150

°C

Lead Temperature for Soldering Leads

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

1.55

°C/W

Junction−to−Ambient Steady State

62

°C/W

www.onsemi.com

600 V

150 m

W @ 10 V

N−Channel MOSFET

D (3)

S (2,4)

G (1)

Device

Package

Shipping

ORDERING INFORMATION

NTP8G206NG

TO−220

(Pb−Free)

50 Units / Rail

TO−220

CASE 221A−09

STYLE 10

1

2

3

4

MARKING DIAGRAM

& PIN ASSIGNMENT

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

NTP8G206NG

AYWW

1

Gate

3

Drain

4

Source

2

Source