MMDFS2P102 datasheet(3/11 Pages) ONSEMI

3 / 11 page

MMDFS2P102

http://onsemi.com

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Voltage

(VGS = 0 Vdc, ID = 0.25 mA)

Temperature Coefficient (Positive)

V(BR)DSS

−

Vdc

mV/°C

Zero Gate Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

μAdc

Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mA)

Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.5

4.0

2.0

−

Vdc

mV/°C

Static Drain−Source Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)

(VGS = 4.5 Vdc, ID = 2.5 Adc)

RDS(on)

−

0.118

0.152

0.160

0.180

Ohms

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

2.0

3.0

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

420

588

Output Capacitance

Coss

−

290

406

Reverse Transfer Capacitance

Crss

−

116

232

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

(VDS = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

−

Rise Time

−

132

Turn−Off Delay Time

td(off)

−

Fall Time

−

Gate Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

−

1.2

−

5.0

−

4.0

−

DRAIN SOURCE DIODE CHARACTERISTICS

Forward On−Voltage (Note 5)

(IS = 2.0 Adc,

VGS = 0 Vdc)

VSD

−

1.5

2.1

Reverse Recovery Time

(IS = 2.0 Adc, VDD = 15 V,

dIS/dt = 100 A/μs)

trr

−

Reverse Recovery Stored

Charge

QRR

−

0.034

−

μC

SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Maximum Instantaneous Forward Voltage (Note 5)

IF = 1.0 A

IF = 2.0 A

TJ = 25°C

TJ = 125°C

Volts

0.47

0.58

0.39

0.53

Maximum Instantaneous Reverse Current (Note 5)

VR = 20 V

TJ = 25°C

TJ = 125°C

0.05

Maximum Voltage Rate of Change

VR = 20 V

dV/dt

10,000

V/ms

4. Negative sign for P−channel device omitted for clarity.

5. Pulse Test: Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2.0%.

6. Switching characteristics are independent of operating temperature.

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