MMDF6N02HDR2 datasheet(2/10 Pages) ONSEMI

2 / 10 page

MMDF6N02HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(Cpk ≥ 2.0) (Note 3)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

24.3

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

2.5

μAdc

Gate−Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)

IGSS

−

0.3

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(Cpk ≥ 2.0) (Note 3)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

0.5

−

0.8

2.86

1.2

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance

(Cpk ≥ 2.0) (Note 3)

(VGS = 4.5 Vdc, ID = 6.0 Adc)

(VGS = 2.5 Vdc, ID = 3.0 Adc)

RDS(on)

−

mΩ

Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc)

gFS

7.0

8.6

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

515

572

Output Capacitance

Coss

−

345

372

Transfer Capacitance

Crss

−

150

178

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(VDD = 10 Vdc, ID = 3.5 Adc,

VGS = 4.0 Vdc,

RG = 10 Ω)

td(on)

−

Rise Time

−

103

Turn−Off Delay Time

td(off)

−

100

108

Fall Time

−

130

140

Gate Charge

See Figure 8

(VDS = 16 Vdc, ID = 6.0 Adc,

VGS = 4.0 Vdc)

−

1.2

−

6.1

−

3.9

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 6.0 Adc, VGS = 0 Vdc)

(IS = 6.0 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

−

0.84

0.77

1.2

−

Vdc

Reverse Recovery Time

(IS = 6.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs)

trr

−

102

−

Reverse Recovery Stored Charge

QRR

−

0.150

−

μC

1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

3. Reflects typical values.

Cpk =

Max limit − Typ

3 x SIGMA

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