MMDF2C02HDR2 datasheet(2/13 Pages) ONSEMI

2 / 13 page

MMDF2C02HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 1)

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 μAdc)

V(BR)DSS

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

IDSS

(N)

(P)

−

1.0

μAdc

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 μAdc)

VGS(th)

−

1.0

1.5

2.0

Vdc

Drain−to−Source On−Resistance

(VGS = 4.5 Vdc, ID = 1.5 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

(N)

(P)

−

0.074

0.152

0.100

0.180

Ohm

Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 10 Vdc, ID = 2.0 Adc)

RDS(on)

(N)

(P)

−

0.058

0.118

0.090

0.160

Ohm

Forward Transconductance

(VDS = 3.0 Vdc, ID = 1.5 Adc)

(VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

(N)

(P)

2.0

3.88

3.0

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

(N)

(P)

−

455

420

630

588

Output Capacitance

Coss

(N)

(P)

−

184

290

250

406

Transfer Capacitance

Crss

(N)

(P)

−

116

232

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

(N)

(P)

−

Rise Time

(N)

(P)

−

116

132

Turn−Off Delay Time

td(off)

(N)

(P)

−

Fall Time

(N)

(P)

−

Turn−On Delay Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

(N)

(P)

−

7.0

Rise Time

(N)

(P)

−

Turn−Off Delay Time

td(off)

(N)

(P)

−

Fall Time

(N)

(P)

−

1. Negative signs for P−Channel device omitted for clarity.

2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

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