Wuxi NCE Power Semiconductor Co., Ltd

Page

v2.0

2

NCEP01T13

Pb Free Product

http://www.ncepower.com

Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

0.7

/W

℃

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

100

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

2.5

4.5

V

Drain-Source On-State Resistance

-

3.65

4.5

mΩ

Forward Transconductance

70

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

7500

-

PF

Output Capacitance

-

1500

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

70

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

28

-

nS

Turn-on Rise Time

-

60

-

nS

Turn-Off Delay Time

-

50

-

nS

Turn-Off Fall Time

-

16

-

nS

Total Gate Charge

-

105

nC

Gate-Source Charge

-

48

nC

Gate-Drain Charge

-

19

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

1.2

V

Diode Forward Current

(Note 2)

-

-

135

A

Reverse Recovery Time

-

80

nS

Reverse Recovery Charge

Qrr

di/dt = 100A/μs

(Note3)

-

195

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25 ,V