MTSF1P02HD

http://onsemi.com

7

t, TIME

di/dt = 300 A/

µs

Standard Cell Density

High Cell Density

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curve (Figure

12) defines the maximum simultaneous drain−to−source

voltage and drain current that a transistor can handle safely

when it is forward biased. Curves are based upon maximum

25

°C. Peak repetitive pulsed power limits are determined by

using the thermal response data in conjunction with the

procedures discussed in AN569, “Transient Thermal

Resistance − General Data and Its Use.”

Switching between the off−state and the on−state may

traverse any load line provided neither rated peak current

total power averaged over a complete switching cycle must

A power MOSFET designated E−FET can be safely used

in switching circuits with unclamped inductive loads. For

reliable operation, the stored energy from circuit inductance

dissipated in the transistor while in avalanche must be less

than the rated limit and must be adjusted for operating

conditions differing from those specified. Although industry

practice is to rate in terms of energy, avalanche energy

capability is not a constant. The energy rating decreases

non−linearly with an increase of peak current in avalanche

and peak junction temperature.

Although many E−FETs can withstand the stress of

drain−to−source avalanche at currents up to rated pulsed

custom. The energy rating must be derated for temperature

as shown in the accompanying graph (Figure 13). Maximum

assumed to equal the values indicated.

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

0

25

50

75

100

125

280

L = 20 mH

150

360

320

240

200

160

120

80

40

0.1

1

10

THERMAL LIMIT

PACKAGE LIMIT

0.01

SINGLE PULSE

10

0.1

dc

10 ms

1

100

100

1 ms