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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MTP1302 датащи(PDF) 2 Page - ON Semiconductor |
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MTP1302 датащи(HTML) 2 Page - ON Semiconductor |
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2 / 8 page  MTP1302 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS 30 − − Vdc Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 10 100 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 1.5 2.0 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 10 Adc) (VGS = 4.5 Vdc, ID = 5.0 Adc) (VGS = 10 Vdc, ID = 42 Adc) RDS(on) − − − 19 26 19.5 22 29 − mW Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C) (VGS = 10 Vdc, ID = 42 Adc) VDS(on) − − − 0.38 − 0.82 0.5 0.33 − Vdc Forward Transconductance (VDS = 10 Vdc, ID = 10 Adc) gFS 10 16 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0 Vd Ciss − 755 1162 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 370 518 Transfer Capacitance f = 1.0 MHz) Crss − 102 204 SWITCHING CHARACTERISTICS (Note 2.) Turn−On Delay Time td(on) − 7.2 15 ns Rise Time (VDD = 15 Vdc, ID = 20 Adc, VGS = 10 Vdc tr − 52 104 Turn−Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) − 45 90 Fall Time RG 9.1 Ω) tf − 73 146 Gate Charge QT − 14.5 21.8 nC (VDS = 24 Vdc, ID = 20 Adc, Q1 − 2.2 − (VDS 24 Vdc, ID 20 Adc, VGS = 5.0 Vdc) Q2 − 8.8 − Q3 − 6.8 − Gate Charge QT − 27 40.5 nC (VDS = 24 Vdc, ID = 20 Adc, Q1 − 2.2 − (VDS 24 Vdc, ID 20 Adc, VGS = 10 Vdc) Q2 − 10 − Q3 − 7.2 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.83 0.79 1.1 − Vdc Reverse Recovery Time trr − 38 − ns (IS = 20 Adc, VGS = 0 Vdc, ta − 19 − (IS 20 Adc, VGS 0 Vdc, dIS/dt = 100 A/µs) tb − 20 − Reverse Recovery Stored Charge QRR − 36 − µC 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. |
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