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INA271-HT датащи(PDF) 12 Page - Texas Instruments |
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INA271-HT датащи(HTML) 12 Page - Texas Instruments |
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12 / 18 page ![]() 0.48 0.44 0.40 0.36 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 0 2 4 6 8 10 12 14 16 18 20 22 V (mV) SENSE 24 INA271V OUT Limit (1) V CM2 V CM1 V CM3 V CM4 V ,V CM2 CM3 CM4 ,andV illustratethevariance fromparttopartoftheV thatcancause CM maximumV withV <20mV. OUT SENSE V limitatV =0mV, OUT SENSE 0 V £ CM1 S £ V NOTE:(1)INA271V Limit=0.4V.INA270V Limit=0.28V. OUT OUT Ideal INA271-HT SBOS521D – SEPTEMBER 2010 – REVISED AUGUST 2013 www.ti.com Low VSENSE Case 2: VSENSE < 20mV, 0V ≤ VCM ≤ VS SHUTDOWN This region of operation is the least accurate for the The INA271 does not provide a shutdown pin; INA271. To achieve the wide input common-mode however, because it consumes a quiescent current voltage range, this device uses two op amp front less than 1mA, it can be powered by either the output ends in parallel. One op amp front end operates in of logic gates or by transistor switches to supply the positive input common-mode voltage range, and power. Driving the gate low shuts down the INA271. the other in the negative input region. For this case, Use a totem-pole output buffer or gate that can neither of these two internal amplifiers dominates and provide sufficient drive along with 0.1 μF bypass overall loop gain is very low. Within this region, VOUT capacitor, preferably ceramic with good high- approaches voltages close to linear operation levels frequency characteristics. This gate should have a for Normal Case 2. supply voltage of 3V or greater because the INA271 requires a minimum supply greater than 2.7V. In This deviation from linear operation becomes greatest addition to eliminating quiescent current, this gate the closer VSENSE approaches 0V. Within this region, also turns off the 10 μA bias current present at each as VSENSE approaches 20mV, device operation is of the inputs. Note that the IN+ and IN– inputs are closer to that described by Normal Case 2. Figure 19 able to withstand full common-mode voltage under all illustrates this behavior for the INA271. The VOUT powered and under-powered conditions. An example maximum peak for this case is determined by shutdown circuit is illustrated in Figure 20. maintaining a constant VS, setting VSENSE = 0mV, and sweeping VCM from 0V to VS. The exact VCM at which RFI/EMI VOUT peaks during this case varies from part to part. The maximum peak voltage for the INA271 is 0.4V. Attention to good layout practices is always recommended. Keep traces short and, when possible, use a printed circuit board (PCB) ground plane with surface-mount components placed as close to the device pins as possible. Small ceramic capacitors placed directly across amplifier inputs can reduce RFI/EMI sensitivity. PCB layout should locate the amplifier as far away as possible from RFI sources. Sources can include other components in the same system as the amplifier itself, such as inductors (particularly switched inductors handling a lot of current and at high frequencies). RFI can generally be identified as a variation in offset voltage or dc signal levels with changes in the interfering RF signal. If the amplifier cannot be located away from sources of radiation, shielding may be needed. Twisting wire input leads makes them more resistant to RF fields. The difference in input pin location of the INA271 versus the INA193–INA198 may provide different EMI performance. Figure 19. Example for Low VSENSE Case 2 (Gain = 20) 12 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: INA271-HT |
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