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MGSF3442VT1 датащи(PDF) 1 Page - ON Semiconductor |
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MGSF3442VT1 датащи(HTML) 1 Page - ON Semiconductor |
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1 / 8 page ![]() Publication Order Number: MGSF3442VT1/D © Semiconductor Components Industries, LLC, 2000 September, 2004 − Rev. XXX 1 MGSF3442VT1 Preferred Device Power MOSFET 4 Amps, 20 Volts N−Channel TSOP−6 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc−d c converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low R DS(on) Provides Higher Efficiency and Extends Battery Life • Miniature TSOP−6 Surface Mount Package Saves Board Space MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 8.0 Vdc Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 µs) ID IDM 4.0 20 A Total Power Dissipation @ TA = 25°C Mounted on FR4 t 5 sec PD 2.0 W Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance − Junction−to−Ambient RθJA 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C 4 AMPERES 20 VOLTS RDS(on) = 70 mΩ 3 4 6 5 2 1 Device Package Shipping ORDERING INFORMATION MGSF3442VT1 TSOP−6 3000 Tape & Reel N−Channel TSOP−6 CASE 318G STYLE 1 http://onsemi.com W MARKING DIAGRAM 442 442 = Device Code W = Work Week PIN ASSIGNMENT Preferred devices are recommended choices for future use and best overall value. 3 2 1 4 Gate Drain Source 6 5 4 1 2 3 5 6 Drain Drain Drain |
Аналогичный номер детали - MGSF3442VT1 |
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Аналогичное описание - MGSF3442VT1 |
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