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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NCE60R360D датащи(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE60R360D датащи(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 10 page  Wuxi NCE Power Semiconductor Co., Ltd Page http://www.ncepower.com v1.0 1 NCE60R360D,NCE60R360,NCE60R360F N-Channel Super Junction Power MOSFET Ⅱ VDS@ Tjmax 650 V RDS(ON)MAX 360 mΩ ID 11 A General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Package Marking And Ordering Information Device Device Package Marking NCE60R360D TO-263 NCE60R360D NCE60R360 TO-220 NCE60R360 NCE60R360F TO-220F NCE60R360F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE60R360D NCE60R360 NCE60R360F Unit Drain-Source Voltage ( VGS=0V） VDS 600 V Gate-Source Voltage ( VDS=0V) VGS ± 30 V Continuous Drain Current at Tc=25°C ID (DC) 11 11* A Continuous Drain Current at Tc=100°C ID (DC) 7 7* A Pulsed drain current (Note 1) IDM (pluse) 33 33* A Maximum Power Dissipation(Tc=25℃) Derate above 25 °C PD 121 0.97 32.7 0.26 W W/ °C Single pulse avalanche energy (Note2) EAS 280 mJ Avalanche current (Note 1) IAR 5.5 A Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR 0.5 mJ TO-263 TO-220 TO-220F Schematic diagram |
Аналогичный номер детали - NCE60R360D |
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Аналогичное описание - NCE60R360D |
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