TLP421 datasheet(4/9 Pages) TOSHIBA

номер детали	TLP421

подробное описание детали	Photocoupler GaAs Ired & Photo - Transistor

PDF	9 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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4 / 9 page

TLP421

2002-09-25

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

IF = 10 mA

1.0

1.2

1.3

Reverse current

VR = 5 V

―

µA

Capacitance

V = 0, f = 1 MHz

―

Collector

-emitter

breakdown voltage

V(BR) CEO

IC = 0.5 mA

―

Emitter

-collector

breakdown voltage

V(BR) ECO

IE = 0.1 mA

―

VCE = 24 V (ambient light

below 1000 ℓx)

―

0.01

(0.1)

0.1

(10)

µA

Collector dark current

ID(ICEO)

VCE = 24 V (ambient light

Ta = 85°C

below 1000 ℓx)

―

0.6

(1)

(50)

µA

Capacitance

(collector to emitter)

CCE

V = 0, f = 1 MHz

―

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

MIn

Typ.

Max

Unit

―

600

Current transfer ratio

IC / IF

IF = 5 mA, VCE = 5 V

Rank GB

100

―

600

―

Saturated CTR

IC / IF (sat)

IF = 1 mA, VCE = 0.4 V

Rank GB

―

IC = 2.4 mA, IF = 8 mA

―

0.4

―

0.2

―

Collector

-emitter saturation

voltage

VCE (sat)

IC = 0.2 mA, IF = 1 mA

Rank GB

―

0.4

Isolation Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Capacitance

(input to output)

VS = 0, f = 1 MHz

―

0.8

―

Isolation resistance

VS = 500 V

1×10

―

Ω

AC, 1 minute

5000

―

AC, 1 second, in oil

―

10000

―

Vrms

Isolation voltage

BVS

DC, 1 minute, in oil

―

10000

―

Vdc

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