PDSP16330/A/B

5

Max.

25

24

PDSP16330A

Min.

12

2

12

0

12

2

5

50

15

15

24

Max.

25

24

25

25

25

25

180

120

Characteristic

†

Input data setup to clock rising edge

†

Input data Hold after clock rising edge

†

CEX, CEY Setup to clock rising edge

†

CEX, CEY Hold aher clock rising edge

†

FORM, S1:0 Setup to clock rising edge

†

FORM, S1:0 Hold after clock rising edge

†

Clock rising edge to valid data

*

Clock period

†

Clock high time

†

Clock low time

†

Latency

†

OEM, OEP low to data high data valid

†

OEM, OEP low to data low data valid

†

OEM, OEP high to data high impedance

†

OEM, OEP low to data high impedance

†

Vcc current (TTL input levels)

†

Vcc current (CMOS input levels)

SWITCHING CHARACTERISTICS

NOTES

1.

LSTTL is equivalent to I

2.

Current is defined as negative into the device

3.

CMOS input levels are defined as: V

4.

All parameters marked * are tested during production.

Parameters marked † are guaranteed by design and characterisation.

5.

All timings are dependent on silicon speed. This speed is tested by measuring clock period.

This guarantees all other timings by characterisation and design.

Value

PDSP16330

Min.

15

2

30

0

15

7

5

100

25

25

24

Max.

40

24

30

30

30

30

110

70

PDSP16330B

Min.

12

2

12

0

12

2

5

40

15

15

24

25

25

25

25

225

150

Units

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

cycles

ns

ns

ns

ns

mA

mA

Conditions

2 x LSTTL + 20pF

2 x LSTTL + 20pF

2 x LSTTL + 20pF

2 x LSTTL + 20pF

2 x LSTTL + 20pF

V

Outputs unloaded

Clock freq. = Max

V

Outputs unloaded

Clock freq. = Max

ABSOLUTE MAXIMUM RATINGS

Supply voltage, V

cc

-0.5V to + 7.0V

Input voltage, V

IN

-0.5V to VCC + 0.5V

Output voltage, V

our

-0.5V to VCC + 0.5V

Clamp diode current per pin, I

±18mA

Static discharge voltage (HMB), V

STAT

500V

Storage temperature. T

stg

-65

°C to + 150°C

Ambient temperature with

power applied T

Commercial

0

°C to + 70°C

Industrial

-40

°C to + 85°C

Military

-55

°C to + 125°C

Package power dissipation P

TOT

1200mW

Junction temperature

150

°C

THERMAL CHARACTERISTICS

Package Type

AC

12

36

GC

12

35

NOTES

1.

Exceeding these ratings may cause permanent damage.

Functional operatlon under these conditions is not implied.

2.

Maximum dissipation or 1 second should not be exceeded;

only one output to be tested at any one time.

3.

Exposure to Absoulte Maximum Ratings for extended periods

may affect device reliability.