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SSFN3313 датащи(PDF) 2 Page - GOOD-ARK Electronics

номер детали SSFN3313
подробное описание детали  30V P-Channel MOSFET
PDF  4 Pages
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производитель  GOOD-ARK [GOOD-ARK Electronics]
домашняя страница  http://www.goodark.com
Logo GOOD-ARK - GOOD-ARK Electronics

SSFN3313 датащи(HTML) 2 Page - GOOD-ARK Electronics

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Rev.1.0
SSFN3313
30V P-Channel MOSFET
Gate-Body Leakage Current
IGSS
VGS=±25V,VDS=0V
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.7
-2.2
-3
V
VGS=-4.5V, ID=-7A
13
17
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-9A
11
14
mΩ
Forward Transconductance
gFS
VDS=-5V,ID=-10A
18
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
1500
PF
Output Capacitance
Coss
300
PF
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
182
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
12
nS
Turn-on Rise Time
tr
11
nS
Turn-Off Delay Time
td(off)
25
nS
Turn-Off Fall Time
tf
VDS=-15V,VGS=-10V,RGEN=3Ω
ID=1A
10
nS
Total Gate Charge
Qg
22
nC
Gate-Source Charge
Qgs
7
nC
Gate-Drain Charge
Qgd
VDS=-15V,ID=-10A,VGS=-10V
4.5
nC
Body Diode Reverse Recovery Time
Trr
29
nS
Body Diode Reverse Recovery Charge
Qrr
IF=-10A, dI/dt=100A/µs
15
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-0.74
-1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in
2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.



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