ACE8205A datasheet(1/8 Pages) ACE

номер детали	ACE8205A

подробное описание детали	Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	8 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE8205A

Dual N-Channel Enhancement Mode Field Effect Transistor

VER 1.1

1

Description

The ACE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in

other Switching application. It is ESD protected.

ACE8205A is electrically identical.

- RoHS Compliant

Features

 V

DS (V) = 20V

ID = 6 A

RDS(ON)< 37mΩ (VGS = 2.5V)

RDS(ON)< 27mΩ (VGS = 4.5V)

 High power and current handing capability

 Lead free product is acquired

 Surface mount package

Applications

 Battery protection

 Load switch

 Power management

Absolute Maximum Ratings

(TA=25℃ unless otherwise noted)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±10

V

Drain Current-Continuous

ID

6

A

Drain Current-Pulsed

(Note 1)

IDM

25

A

Maximum Power Dissipation

P

D

1.5

W

Operating Junction and Storage Temperature Range

T

J,TSTG

-55 To 150

℃

Thermal Resistance, Junction-to-Ambient

(Note 2)

RθJA

83

℃/W

Аналогичный номер детали - ACE8205A

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Аналогичный номер детали - ACE8205A

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