ACE7402M

N-Channel 30-V MOSFET

VER 1.1

3

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Gate Source Threshold Voltage

1

V

Gate Body Leakage

±100

nA

Zero Gate Voltage Drain Current

1

uA

25

On-State Drain-Current

a

30

A

Static Drain-Source On-Resistance

a

8.5

m

Ω

16

Forward Transconductance

a

15

S

Diode Forward Voltage

a

0.79

V

Dynamic

b

Total Gate Charge

10

nC

Gate-Source Charge

5.3

Gate-Drain Charge

3.8

Turn-On Delay Time

Ω

Ω,

6

ns

Rise Time

6

Turn-Off Delay Time

28

Fall Time

8

Input Capacitance

f=1MHz

1379

pF

Output Capacitance

156

Reverse Transfer Capacitance

116

Note:

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing

.