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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ACE1715B датащи(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1715B датащи(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page  ACE1715B N-Channel Enhancement Mode MOSFET VER 1.1 1 Description The ACE1715B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS (V) = 150V ID = 1.5 (VGS = 10V) RDS(ON) < 450mΩ (VGS = 10V) High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Absolute Maximum Ratings TA=25℃ unless otherwise noted Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 150 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) * AC TA=25 OC ID 1.5 A TA=70 OC 1.0 Drain Current (Pulse) * B IDM 6 Power Dissipation TA=25 OC PD 2 W TA=70 OC 1.3 Operating temperature / storage temperature TJ,TSTG -55 to 150 OC Packaging Type SOT-23-6L Marking Ordering information ACE1715B XX + H GM : SOT-23-6L Pb - free Halogen - free D D D D G S 1715 . |
Аналогичный номер детали - ACE1715B |
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Аналогичное описание - ACE1715B |
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