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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ACE1710B датащи(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1710B датащи(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page  ACE1710B N-Channel Enhancement Mode MOSFET VER 1.1 1 Description The ACE1710B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications Features 100V/1.5A RDS(ON) ＜280mΩ @ V GS = 10V High density cell design for ultra low R DS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation SOT23 -3LPackage Absolute Maximum Ratings TA=25℃ unless otherwise noted Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25℃ ID 1.5 A TA=70℃ 1.2 Drain Current (Pulsed) IDM 5 A Power Dissipation TA=25℃ PD 1 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOT-23-3 L Marking 3 Ordering information ACE1710B XX + H BM : SOT-23-3L Pb - free Halogen - free 1 2 G S D |
Аналогичный номер детали - ACE1710B |
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Аналогичное описание - ACE1710B |
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