D0512 TKIM TC-00002832/O2611 TKIM/D2607IP TIIM TC-00001114/ No.7437-1/9

O2203 TSIM/51503 TSIM TA-100479

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

August, 2013

TND027SW

Excellent Power Device

Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving, Dual SOIC8

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Features

•

N-channel MOSFET built in

•

Halogen free compliance

•

Overheat protection (Self recovery type)

•

Overcurrent protection (Self recovery type current limiting function)

•

Overvoltage protection

•

Incorporates two sets of circuit

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDS

60

V

Output Current

IO(DC)

1.5

A

Input Voltage

VIN

--0.3 to +10

V

Allowable Power Dissipation

PD

1.3

W

1.7

W

Operating Supply Voltage

VDS(opr)

40

V

Operating Temperature

Topr

--40 to +85

°C

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7072-003

IN

GND(S)

OUT(D)

Overvoltage

protective circuit

Overcurrent

protective

circuit

Output current

control

Overheat

protective

circuit

ESD

protective

circuit

Gate

shutdown

circuit

Ordering number : EN7437D

4.9

0.22

14

5

8

0.445

1.27

1 : GND1

2 : IN1

3 : GND2

4 : IN2

5 : OUT2

6 : OUT2

7 : OUT1

8 : OUT1

SOIC8

Product & Package Information

• Package

: SOIC8

• JEITA, JEDEC

: SC-87, SOT-96

• Minimum Packing Quantity : 2,500 pcs./reel

Packing Type: TL

Marking

Block Diagram

TL

TND

LOT No.

027

TND027SW-TL-2H