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UPFS320P датащи(PDF) 1 Page - Microsemi Corporation |
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UPFS320P датащи(HTML) 1 Page - Microsemi Corporation |
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1 / 5 page ![]() MSC 02-17-00 PRELIMINARY UPFS320P Features • POWERMITE 3 Surface Mount Package • MOSFET with Schottky Rectifier for reverse voltage blocking • Single 3 leaded device replaces 2 individual components • Integral Heat Sink / Locking Tabs • Supplied in 16mm Tape and Reel – 6000 units/reel • Superior Low Thermal and Electrical capability Mechanical Characteristics • Footprint Area of 16.51 mm2 • Case: Molded Epoxy • Meets UL94VO at 1/8 inch • Weight: 72 milligrams • Lead and Mounting Temperatures: 260°°°°C max for 10 seconds Description Note: Vks = Vds (Mosfet) + Vf (Rectifier) Absolute Maximum Ratings at 25°C RATING SYMBOL VALUE UNIT Cathode-to-Source Voltage VKSS +/- 20 Vdc Gate-to-Source Voltage VGS +/- 8 Vdc Cathode Current: Continuous @ TA=25 °°°°C IK 3.0 Adc Single Pulsed IKM 11.0 Apk Total Power Dissipation PD (1) 2.0 Watts Storage Temperature T stg -55 to 150 °°°°C C Operating Temperature T op -55 to 150 °°°°C C Thermal Characteristics Thermal Resistance: Junction to Tab Rjtab 5 °°°°C/Watt (1)Junction-to-tab Rja (1) 60 °°°°C/Watt (2)Junction-to-ambient Rja (2) 120 °°°°C/Watt (1) Mounted on 2” square by 0.06’ thick FR4 board with a 1” x1” square 2 ounce copper pattern. (2) Mounted on 0.06 thick FR4 board, using recommended footprint, with 2 ounce copper # 580 Pleasant Street Watertown, MA 02472 Phone:(617) 926-0404 F A X : (617) 924-1235 SURFACE MOUNT P – CHANNEL MOSKEY The MOSKEY combines a MOSFET with a Schottky Recti- fier to provide reverse blocking capability in a single three leaded package. This device is well suited for applications such as battery chargers and switching where the intrinsic source-drain diode is an undesirable feature. |
Аналогичный номер детали - UPFS320P |
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Аналогичное описание - UPFS320P |
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