BAV23CL datasheet(2/4 Pages) ONSEMI

2 / 4 page

BAV23CL, NSVBAV23CL

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

SINGLE HEATED

Total Device Dissipation (Note 1) TA = 25°C

Derate above 25°C

265

2.1

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 1)

RqJA

472

°C/W

Thermal Reference, Junction−to−Anode Lead (Note 1)

R_ψJL

263

°C/W

Thermal Reference, Junction−to−Case (Note 1)

R_ψJC

289

°C/W

Total Device Dissipation (Note 2) TA = 25°C

Derate above 25°C

345

2.7

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 2)

RqJA

362

°C/W

Thermal Reference, Junction−to−Anode Lead (Note 2)

R_ψJL

251

°C/W

Thermal Reference, Junction−to−Case (Note 2)

R_ψJC

250

°C/W

DUAL HEATED (Note 3)

Total Device Dissipation (Note 1) TA = 25°C

Derate above 25°C

390

3.1

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 1)

RqJA

321

°C/W

Thermal Reference, Junction−to−Anode Lead (Note 1)

R_ψJL

159

°C/W

Thermal Reference, Junction−to−Case (Note 1)

R_ψJC

138

°C/W

Total Device Dissipation (Note 2) TA = 25°C

Derate above 25°C

540

4.3

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 2)

RqJA

231

°C/W

Thermal Reference, Junction−to−Anode Lead (Note 2)

R_ψJL

148

°C/W

Thermal Reference, Junction−to−Case (Note 2)

R_ψJC

119

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

1. FR-4 @ 100 mm2, 1 oz. copper traces, still air.

2. FR-4 @ 500 mm2, 2 oz. copper traces, still air.

3. Dual heated values assume total power is sum of two equally powered channels

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 200 Vdc)

(VR = 200 Vdc, TJ = 150°C)

−

0.1

100

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

V(BR)

250

−

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

−

1000

1250

Diode Capacitance

(VR = 0, f = 1.0 MHz)

−

5.0

Reverse Recovery Time

(IF = IR = 30 mAdc, RL = 100 W)

trr

−

150

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