Microsemi

RF Products Division

140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855

Page 1

Copyright

 2000

MSC1660.PDF 2001-01-30

MS2393

RF & MICROWAVE TRANSISTORS

R F P R O D UCT S DI VI SI ON

DESCRI PTION

DESCRI PTION

DESCRI PTION

DESCRI PTION

The MS2393 is a gold metallized, silicon NPN power transistor.

The MS2393 is designed for applications requiring high peak power

and low duty cycles such as IFF, DME and TACAN. The MS2393 is

packaged in a metal/ceramic package with internal input/output

matching, resulting in improved broadband performance and low

thermal resistance.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

11

A

Power Dissipation

583

W

Junction Temperature

+200

°C

Storage Temperature

-65 to +150

°C

THERMAL DATA

Junction-Case Thermal Resistance

0.30

°C/W

KEY FEATU R ES

KEY FEATU R ES

KEY FEATU R ES

KEY FEATU R ES

Designed For High

Power Pulse IFF, DME,

and TACAN

Applications

200 W (typ.) IFF 1030 –

1090 MHz

150 W (min.) DME 1025

– 1150 MHz

140 W (typ.) TACAN

960 – 1215 MHz

8.2 dB Gain

Refractory Gold

Metallization

Ballasting And Low

Thermal Resistance For

Reliability And

Ruggedness

30:1 Load VSWR

Capability At Specified

Operating Conditions

Input And Output

Matched Common Base

Configuration

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITS

SS

S

Avionics Applications