MRF581 datasheet(1/6 Pages) MICROSEMI

номер детали	MRF581

подробное описание детали	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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производитель	MICROSEMI [Microsemi Corporation]

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MSC1318.PDF 10-25-99

MRF581/MRF581A

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

MRF581

MRF581A

Unit

VCEO

Collector-Emitter Voltage

18

15

Vdc

VCBO

Collector-Base Voltage

30

Vdc

VEBO

Emitter-Base Voltage

2.5

Vdc

IC

Collector Current

200

mA

Thermal Data

P

D

Total Device Dissipation @ TC = 50ºC

Derate above 50ºC

2.5

25

Watts

mW/ ºC

P

D

Total Device Dissipation @ TC = 25ºC

Derate above 25ºC

1.25

10

Watts

mW/ ºC

Tstg

Storage Junction Temperature Range

-65 to +150

ºC

TJmax

Maximum Junction Temperature

150

ºC

Macro X

Features

•

Low Noise - 2.5 dB @ 500 MHZ

•

High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz

•

Ftau - 5.0 GHz @ 10v, 75mA

•

Cost Effective MacroX Package

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

Аналогичный номер детали - MRF581

производитель	номер детали	датащи	подробное описание детали
Advanced Power Technolo...	MRF581	282Kb / 6P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Semiconductor	MRF581	35Kb / 1P	NPN SILICON RF TRANSISTOR
New Jersey Semi-Conduct...	MRF581	99Kb / 3P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation	MRF581	162Kb / 6P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Motorola, Inc	MRF5811LT1	155Kb / 8P	LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON

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Аналогичное описание - MRF581

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Microsemi Corporation	2N6304	86Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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Advanced Power Technolo...	BFR90	120Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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