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LX5503-LQ датащи(PDF) 2 Page - Microsemi Corporation

номер детали LX5503-LQ
подробное описание детали  InGaP HBT 5-6GHz Power Amplifier
PDF  13 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

LX5503-LQ датащи(HTML) 2 Page - Microsemi Corporation

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LX5503
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
InGaP HBT 5-6GHz Power Amplifier
I N T E GRA T ED
PRODUCT S
Copyright
 2000
Rev. 1.1, 9/16/2002
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF off................................................................................6V
Collector Current.........................................................................................500mA
Total Power Dissipation...................................................................................3 W
RF Input Power ...........................................................................................10dBm
Operation Ambient Temperature ....................................................... -40 to +85
oC
Storage Temperature ........................................................................ -60 to +150
oC
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
PACKAGE PIN OUT
1
2
3
4
5
6
7
8
9
10
11
12
13 14 15 16
1
2
3
4
5
6
7
8
9
10
11
12
13 14 15 16
LQ PACKAGE
(Bottom View)
FUNCTIONAL PIN DESCRIPTION
Pin Name
Pin Number
Description
RF IN
2, 3
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor
base of the first stage. For 5.15-5.35GHz this pin is pre-matched to 50
Ω.
Vb1
6
Bias current control voltage for the first stage.
Vb2
7
Bias current control voltage for the second stage. The VB2 pin can be connected with the first
stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an
external resistor bridge(R1/R2).
Vcc
9
Supply voltage for the bias reference and control circuits. The VCC feed line should be
terminated with a 1
µF bypass capacitor as close to the device as possible. This pin can be
combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc).
RF OUT
10, 11
RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
Vc1
15
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 220pF
bypass capacitor as close to the device as possible, followed by a 1
µF bypass capacitor at the
supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply
voltage (referred to as Vc).
Vc2
14
Power supply for second stage amplifier. The VC2 feedline should be terminated with a 220pF
bypass capacitor as close to the device as possible, followed by a 1
µF bypass capacitor at the
supply side. This pin can be combined with VC1 and VCC pins, resulting in a single supply
voltage (referred to as Vc).
GND
The center metal base of the MLP package provides both DC and RF ground as well as heat
sink for the power amplifier.



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