Microsemi

Watertown Division

580 Pleasant Street, Watertown, MA. 02172, 617-926-0404, Fax: 617-924-1235

Page 1

Copyright

 2000

MSC0874.PDF 2000-08-23

W A T E R T O W N DI V I S I ON

HUM2010/HUM2015/HUM2020

PIN DIODE HIGH POWER STUD

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

With high isolation, low loss, and low distortion characteristics, this

Microsemi Power PIN diode is perfect for the high power switching

applications where size and power handling capability are critical.

Its advantages also include the low forward bias resistance and high

zero bias impedance that are essential for low loss, high isolation and wide

bandwidth performance.

Hermetically sealed, SOGO passivated PIN chips with full-faced

metallurgical bonds on both sides to achieve high reliability and high surge

capability.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

!"High Power Stud Mount

Package

!"High Zero Bias Impedance

!"Very Low Inductance and

Capacitance

!"No Internal Lead Straps

!"Small Mechanical Outline

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITS

SS

S

• MRI Applications

• High Power Antenna Switching

A B S O L U T E MA X I MU M R A TI N G S

Maximum Reverse Voltage

1000/1500/2000 V

Average Power Dissipation @ Stud = 50°C

13 W

Non-Repetitive Sinusoidal Surge Current (8.3 ms)

100 A

Storage Temperature Range

65°C to +175°C

Operating Temperature Range

55°C to +150°C

Thermal Resistance

7.5°C / W

ELEC TRICA L SPE CI FICAT IONS [25°C]

[25°C]

[25°C]

[25°C]

Test

Min

Typ

Max

Units

Conditions

0.10

0.20

Ω

3.4

4.0

pF

F = 1 MHz, 100 V

10

µA

Carrier Lifetime

τ

10

30

µs

200

K

Ω

F = 10 MHz, 100 V

0.85

1.0

V

Voltage Ratings [25°C]

Voltage Ratings [25°C]

Voltage Ratings [25°C]

Voltage Ratings [25°C]

Reverse Voltage

Part type

µA

1000V

HUM2010

1500V

HUM2015

2000V

HUM2020