DESCRIPTION

The GC4200 series are high speed (cathode base) PIN di-

odes made with high resistivity epitaxial silicon material.

These diodes are passivated with silicon dioxide for high

stability and reliability and have been proven by thou-

sands of device hours in high reliability systems.

These devices can withstand storage temperatures from

-65° to +200°C and will operate over the range from -55°

to +150°C. All devices meet or exceed military environ-

mental specifications of MIL-S-19500. The GC4200 se-

ries will operate with as little as +10 mA forward bias.

MODEL

NUMBER

BREAKDOWN VOLTAGE

JUNCTION

(pF)

(20mA, 1 GHz)

(Ohms)

CARRIER LIFETIME

(nS)

THERMAL RESISTANCE

(MAX)

(°C/W)

GC4270

70

0.06

1.5

60

80

GC4271

70

0.10

1.0

60

70

GC4272

70

0.20

0.8

60

70

GC4273

70

0.30

0.7

60

60

GC4274

70

0.40

0.6

60

50

GC4275

70

0.50

0.5

60

40

GC4210

100

0.06

1.5

100

80

GC4211

100

0.10

1.0

100

70

GC4212

100

0.20

0.75

100

70

GC4213

100

0.30

0.6

100

60

GC4214

100

0.40

0.5

100

50

GC4215

100

0.50

0.35

100

40

GC4220

250

0.06

2.5

400

80

GC4221

250

0.10

2.0

400

70

GC4222

250

0.20

1.5

400

70

GC4223

250

0.30

1.0

400

60

GC4224

250

0.40

0.8

400

50

GC4225

250

0.50

0.6

400

40

RATINGS

Maximum Leakage Current: 0.5µA at 80%of minimum

rated breakdown

Operating Temperature:

-55°C to +150°C

Storage Temperature:

-65°C to +200°C

APPLICATIONS

The GC4200 series can be used in RF circuits as an on/off

element, as a switch, or as a current controlled resistor

in attenuators extending over the frequency range from

UHF through Ku band.

Switch applications include high speed switches (ECM

systems), TR switches, channel or antenna selection

switches (telecommunications), duplexers (radar) and

digital phase shifters (phased arrays).

The GC4200 series are also used as passive and active

limiters for low to moderate RF power levels.

Attenuator type applications include amplitude modula-

tors, AGC attenuators, power levelers and level set attenua-

HIGH SPEED PIN DIODES

The tabulated specifications above are for the style 30

package. Diodes may also be available in other case

styles.

Each type offers trade offs in series resistance, junction

capacitance and carrier lifetime; the proper choice of

which depends on the end application. Reverse polarity

diodes (NIP) and higher voltage PIN and NIP diodes are

also available. (See data sheets for GC4300, GC4400,

and GC4500 series respectively.)

Notes:

1. Capacitance is measured at 1 MHz and -10 volts.

2. Resistance is measured using transmission loss techniques.

3. This series of devices is available in standard case styles 00, 15, 30, 35 and 85, plus other styles on request.

SEMICONDUCTOR OPERATION

75 Technology Drive • Lowell, MA 01851 • Tel: 978-442-5600 • Fax: 978-937-3748

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Control Devices

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