2N4033 datasheet(2/2 Pages) MICROSEMI

2 / 2 page

CHARACTERISTICS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Off Characteristics

Collector-Emitter Breakdown Voltage(1) (I C = -10 mA)

BVCEO

-80

Collector-Base Breakdown Voltage (I C = -10 µA)

BVCBO

-80

Emitter-Base Breakdown Voltage (I E = -10 uA)

BVEBO

-5.0

Collector Cutoff Current

(VCB = -60 V)

(VCB = -60 V, TA = 150

ICBO

-10

-25

Emitter Cutoff Current (V EB = -3.0 V)

IEBO

-25

D.C. Current Gain

(IC = -500 mA, VCE = -5.0 V @ -55

C)(1)

(IC = -100 µA, VCE = -5.0 V)

(IC = -100 mA, VCE = -5.0 V)(1)

(IC = -500 mA, VCE = -5.0 V)(1)

(IC = -1.0 A, VCE = -5 V)(1)

hFE

100

300

Collector-Emitter Saturation Voltage(1)

(IC = -150 mA, IB = -15 mA)

(IC = -500 mA, IB = -50 mA)

(Ic = -1.0A, IB = -100mA)

VCE(Sat)

-0.15

-0.50

1.0

Base-Emitter Saturation Voltage(1)

(IC = -150 mA, IB = -15 mA)

VBE(Sat)

-0.9

Base-Emitter On Voltage

(IC = -500 mA, VCE = - 0.5 V)(1)

VBE(Sat)

-1.2

Output Capacitance

(VCE = -10 V, 100kHz < f < 1.0MHz)

COBO

Input Capacitance

(VCE = -0.5 V, 100kHz < f < 1.0 MHz)

CIBO

Small Signal Current Gain

(IC = -50 mA, VCE = -10 V, f = 100 MHz)

/hfe/

1.5

6.0

Switching Speeds

Delay Time (Ic = 500mAdc; IB = 50mAdc)

Rise Time (Ic = 500mAdc; IB = 50mAdc)

Storage Time (Ic = 500mAdc; IB1 =IB2 = 50mAdc)

Fall Time (Ic = 500mAdc; IB1 = IB2 = 50mAdc)

175

Electrical Parameters (TA @ 25

°°C unless otherwise specified)

2N4033

Datasheet# MSC0283A 5/23/97

2N4033 датащи(PDF) 2 Page - Microsemi Corporation

2N4033 датащи(HTML) 2 Page - Microsemi Corporation

Html Pages

1 2

датащи скачать

ссылки URL