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2N3585 датащи(PDF) 2 Page - Microsemi Corporation |
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2N3585 датащи(HTML) 2 Page - Microsemi Corporation |
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2 / 3 page ![]() MSC1057.PDF 05-19-99 2N3585 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: (25 °°Case Temperature Unless Otherwise Noted) VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Min. Max. Units VCEO(sus)* Collector-Emitter Sustaining Voltage IC = 0.2 Amp (Notes 1 and 2) 300 ---- Volts VCER(sus) Collector-Emitter Sustaining Voltage IC = 0.2A, RBE = 50Ω Ω (Notes 1 and 2) 400 ---- Volts ICEV* Collector Cutoff Current VCE = 450V, VBE = -1.5V ---- 1.0 mA. ICEV* Collector Cutoff Current TC = 150°°C VCE = 300V, VBE = -1.5V ---- 3.0 mA. ICEO* Collector Cutoff Current VCE = 150V, IB = 0 ---- 5.0 mA. IEB0* Emitter Cutoff Current VEB = 6V, IC = 0 ---- 0.5 mA. hFE* DC Forward Current Transfer Ratio (Note 1) IC = 0.1A, VCE = 10V IC = 1.0A, VCE = 10V IC = 1.0A, VCE = 2V 40 25 8 ---- 100 80 ---- ---- ---- VCE(sat)* Collector-Emitter Saturation Voltage (Note 1) IC = 1.0A, IB = 0.125A ---- 0.75 Volts VBE(sat)* Base-Emitter Saturation Voltage (Note 1) IC = 1.0A, IB = 0.10A ---- 1.4 Volts IS/b Second-Breakdown Collector Current (with base forward biased) VCE = 100V, t = 1.0sec. 0.35 ---- A ES/b* Second-Breakdown Energy (with base reverse biased) VEB = 4V, RBE = 20Ω Ω , L = 100µµh 200 ---- µµJ hfe* Common-Emitter Small- Signal Forward Current Transfer Ratio VCE = 10V, IC = 0.2A, f = 5 MHz 3 ---- ---- I hfe I* Common-Emitter Small- Signal Forward Current Transfer Ratio, f = 5 MHz VCE = 10V, IC = 0.2A 2.0 ---- ---- COb Collector-Base Capacitance VCB = 10V, IE = 0, f = 1.0MHz ---- 120 pf tr* Rise Time IC = 1.0A, IB2 = 0.10A ---- 3.0 µµsec. ts* Storage Time IC = 1.0A, IB1 = IB2 = 0.10A ---- 4.0 µµsec. tf* Fall Time IC = 1.0A, IB1 = IB2 = 0.10A ---- 3.0 µµsec. Note 1: Pulse Test: Pulse width = 300 µµSec., Rep. Rate 60Hz. Note 2: Caution - Do not use Curve Tracer. * Indicates JEDEC registered data. |
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