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2N2880 датащи(PDF) 2 Page - Microsemi Corporation

номер детали 2N2880
подробное описание детали  5 Amp, 80V, Planar, NPN Power Transistors JAN,JTX,JANTXV,JANS
PDF  3 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N2880 датащи(HTML) 2 Page - Microsemi Corporation

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MSC0950A.DOC 11-09-98
2N2880
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(25
°°Case Temperature Unless Otherwise Noted)
VALUE
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Max.
Units
BVCBO*
Collector-Base Voltage
IC = 10 µAdc, Cond. D
110
----
Vdc
BVCEO*
Collector-Emitter Voltage
(Note 1)
IC = 0.1 Adc, Cond. D
80
----
Vdc
BVEBO*
Emitter-Base Voltage
IE = 10 µAdc, Cond. D
8
----
Vdc
ICEO*
Collector-Emitter
Cutoff Current
VCE = 60 Vdc, Cond. D
----
20
µAdc
ICEX*
Collector-Emitter
Cutoff Current
VCE = 110 Vdc, VEB = 0.5 Vdc, Cond. A
VCE = 80 Vdc, VEB = 0.5 Vdc, Cond. A, TA = 150°°C
----
----
1.0
50
µAdc
µA
ICBO*
Collector-Base
Cutoff Current
VCB = 80 Vdc, Cond. D
VCB = 60 Vdc, Cond. D, TA = - 150°°C
----
----
0.2
10
µAdc
----
IEBO*
Emitter-Base
Cutoff Current
VEB = 6 Vdc, Cond. D
----
0.2
µAdc
hFE*
DC Current Gain
(Note 1)
IC = 50 mAdc, VCE = 5 Vdc
IC = 1 Adc, VCE = 5 Vdc
IC = 5 Adc, VCE = 5 Vdc
IC = 1 Adc, VCE = 5 Vdc, TA = - 55°°C
40
40
15
15
120
120
----
----
----
----
----
----
hFE*
AC Current Gain
IC = 50 mAdc, VCE = 5 Vdc, f = è
è KHz
40
120
----
VCE(sat)*
Collector Saturation
Voltage (Note 1)
IC = 1 Adc, IB = 0.1 Adc
IC = 5 Adc, IB = 0.5 Adc
----
----
0.25
1.5
Vdc
Vdc
VBE(sat)*
Base Saturation
Voltage (Note 1)
IC = 1 Adc, IB = 0.1 Adc
----
1.2
Vdc
VBE(on)*
Base On-Voltage
(Note 1)
IC = 1 Adc, VCE = 2 Vdc
----
1.2
Vdc
fT*
Gain-Bandwidth Product
IC = 1 Adc, VCE = 10 Vdc, f = 10 MHz
30
120
MHz
Cob*
Output Capacitance
VCB = 10 Vdc, 1E = 0, f = 1 MHz
----
150
pf
td*
Delay Time
IC = 1 A, IB1 = IB2 = 100 ma
----
60
ns
tr*
Rise Time
IC = 1 A, IB1 = IB2 = 100 ma
----
300
ns
ts*
Storage Time
IC = 1 A, IB1, = IB2 = 100 ma
----
1.7
µµs
tf*
Fall Time
IC = 1 A, IB1 = IB2 = 100 ma
----
300
ns
IS/B*
Forward-Biased
Second Breakdown
VCE = 20 Vdc, t = 10 Sec, TC = 100°°C
VCE = 80 Vdc, t = 10 Sec, TC = 100°°C
1.5
80
----
----
Adc
mAdc
ES/B*
Clamped Reverse-
Biased Second
Breakdown
IC = 5 A, L = 1 mH, VClamp = 110 V, TC = 100°°C
IB = 0.5 A, RBB2 = 20Ω
Ω, VBB2 = -3.0V
12.5
----
mj
ES/B*
Unclamped Reverse-
Biased Second
Breakdown
IC = 5 A, L = 1 mH, Base Open
IC = 1.6 A, L = 10 mH, Base Open
12.5
12.8
----
----
mj
mj
Note 1: Pulse Test: PW = 300
µµs, Duty Cycle ≤≤ 2%.
* Indicates MIL-S-19500/315



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