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KAI-08051 датащи(PDF) 20 Page - ON Semiconductor

номер детали KAI-08051
подробное описание детали  Interline CCD Image Sensor
PDF  35 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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KAI-08051 датащи(HTML) 20 Page - ON Semiconductor

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The VCCD clock waveform must not have a negative
overshoot more than 0.4 V below the ESD voltage.
Figure 17.
All VCCD Clocks absolute
maximum overshoot of 0.4 V
0.0V
ESD
ESD − 0.4V
Example of external diode protection for SUB, VDD and
ESD.
a denotes a, b, c or d
Figure 18.
GND
SUB
VDDa
ESD
Table 15. DC BIAS OPERATING CONDITIONS
Description
Pins
Symbol
Minimum
Nominal
Maximum
Units
Maximum DC
Current
Notes
Reset Drain
RDa
RD
+11.8
+12.0
+12.2
V
10 mA
1
Output Gate
OGa
OG
−2.2
−2.0
−1.8
V
10 mA
1
Output Amplifier Supply
VDDa
VDD
+14.5
+15.0
+15.5
V
11.0 mA
1,2
Ground
GND
GND
0.0
0.0
0.0
V
−1.0 mA
Substrate
SUB
VSUB
+5.0
VAB
VDD
V
50 mA
3, 8
ESD Protection Disable
ESD
ESD
−9.2
−9.0
Vx_L
V
50 mA
6, 7, 9
Output Bias Current
VOUTa
Iout
−3.0
−7.0
−10.0
mA
1, 4, 5
1. a denotes a, b, c or d
2. The maximum DC current is for one output. Idd = Iout + Iss. See Figure 19.
3. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value of VAB is set such
that the photodiode charge capacity is the nominal PNe (see Specifications).
4. An output load sink must be applied to each VOUT pin to activate each output amplifier.
5. Nominal value required for 40 MHz operation per output. May be reduced for slower data rates and lower noise.
6. Adherence to the power−up and power−down sequence is critical. See Power−Up and Power−Down Sequence section.
7. ESD maximum value must be less than or equal to V1_L + 0.4 V and V2_L + 0.4 V
8. Refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible Lighting Conditions
9. Where Vx_L is the level set for V1_L, V2_L, V3_L, or V4_L in the application.



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