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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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KAI-08050 датащи(PDF) 3 Page - ON Semiconductor |
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KAI-08050 датащи(HTML) 3 Page - ON Semiconductor |
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3 / 31 page  KAI−08050 www.onsemi.com 3 DEVICE DESCRIPTION Architecture Figure 2. Block Diagram HLOD 12 Dark 12 V1B 12 Buffer 12 12 22 1 Dummy 1 Dummy 3296H x 2472V 5.5 mm x 5.5 mm Pixels 1648 1648 1648 1648 (Last VCCD Phase = V1 → H1S) V2B V3B V4B V1T V2T V3T V4T RDa Ra VDDa VOUTa GND RDc Rc VDDc VOUTc GND RDd Rd VDDd VOUTd GND RDb Rb VDDb VOUTb GND V1B V2B V3B V4B V1T V2T V3T V4T H2SLa OGa H2SLc OGc H2SLd OGd H2SLb OGb ESD ESD 8 22 10 1 12 8 22 10 1 12 8 22 10 1 12 8 22 12 22 12 DevID HLOD 10 1 Dark Reference Pixels There are 12 dark reference rows at the top and 12 dark rows at the bottom of the image sensor. The dark rows are not entirely dark and so should not be used for a dark reference level. Use the 22 dark columns on the left or right side of the image sensor as a dark reference. Under normal circumstances use only the center 20 columns of the 22 column dark reference due to potential light leakage. Dummy Pixels Within each horizontal shift register there are 11 leading additional shift phases. These pixels are designated as dummy pixels and should not be used to determine a dark reference level. In addition, there is one dummy row of pixels at the top and bottom of the image. Active Buffer Pixels 12 unshielded pixels adjacent to any leading or trailing dark reference regions are classified as active buffer pixels. These pixels are light sensitive but are not tested for defects and non−uniformities. Image Acquisitio n An electronic representation of an image is formed when incident photons falling on the sensor plane create electron−hole pairs within the individual silicon photodiodes. These photoelectrons are collected locally by the formation of potential wells at each photosite. Below photodiode saturation, the number of photoelectrons collected at each pixel is linearly dependent upon light level and exposure time and non−linearly dependent on wavelength. When the photodiodes charge capacity is reached, excess electrons are discharged into the substrate to prevent blooming. |
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