NVMFS5113PL datasheet(4/6 Pages) ONSEMI

номер детали	NVMFS5113PL

подробное описание детали	Power MOSFET

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производитель	ONSEMI [ON Semiconductor]

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NVMFS5113PL

www.onsemi.com

TYPICAL CHARACTERISTICS

0.01

0.1

100

1000

0.1

100

110

120

0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

10203040

5060

7080

Figure 7. Capacitance Variation

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

f = 1 MHz

VGS = 0 V

Ciss

Coss

Crss

Figure 8. Gate−to−Source Voltage vs. Total

Charge

Qg, TOTAL GATE CHARGE (nC)

VDS = −48 A

ID = −17 A

TJ = 25°C

Qgs

Qgd

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (W)

VDD = −48 V

VGS = −10 V

ID = −17 A

td(off)

td(on)

Figure 10. Diode Forward Voltage vs. Current

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

VGS = 0 V

TJ = 25°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS ≤ −10 V

Single Pulse

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

100

1 ms

10 ms

Figure 12. Avalanche Characteristics

TAV, TIME IN AVALANCHE (s)

1000

2000

3000

4000

5000

6000

1020

30405060

1.0

10.0

100.0

1000.0

100

1.00E−05

1.00E−02

1.00E−04

1.00E−03

TJ(initial) = 125°C

TJ(initial) = 25°C

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