MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918

www.micropac.com

E-MAIL: optosales@micropac.com

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61113

SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2369AUB)

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

MIN

MAX

UNITS

TEST CONDITIONS

NOTE

Collector-Base Breakdown Voltage

40

Collector-Emitter Breakdown Voltage

40

Collector-Emitter Sustaining Voltage

15

Emitter-Base Breakdown Voltage

4.5

Collector-Base Cutoff Current

0.4

30

Collector-Emitter Cutoff Current

0.4

Forward-Current Transfer Ratio

-120

-

20

-

20

-

20

-

1

30

-

Collector-Emitter Saturation Voltage

0.20

V

1

0.30

V

0.25

V

0.50

V

1

Base-Emitter Saturation Voltage

0.7

0.85

V

1

0.59

-

V

1.02

V

1.15

V

1.60

V

1

SMALL-SIGNAL CHARACTERISTICS

Current-Gain – Bandwidth Product

500

MHz

Input Capacitance

(Output Open Capacitance)

25

pF

Turn-On Time

35

nS

Turn-Off Time

300

nS

NOTES:

1.

SELECTION GUIDE

PART NUMBER

PART DESCRIPTION

61113-001

2N2369AUB PNP transistor, commercial version

61113-002

2N2369AUB PNP transistor, JAN level screening

61113-003

2N2369AUB PNP transistor, JANTX level screening

61113-004

2N2369AUB PNP transistor, JANTXV level screening

61113-005

2N2369AUB PNP transistor, JANS level screening

NOTE: Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions.