FCDN608−UBM

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3

MECHANICAL DETAILS

Table 6. MECHANICAL SPECIFICATIONS

Parameter

Condition

Units

Composition

Silicon Wafer,

n+ Doped

Die Shape

Rectangular

Length (Stepping Size)

1560

mm

Width (Stepping Size)

1160

mm

BG Thickness

10

mils

Saw Street Widths (Space

between Devices on Wafer)

(Note 1)

40 (X−Direction)

40 (Y−Direction)

mm

Die Attach Pad Length

1000

mm

Die Attach Pad Width

1000

mm

Die Attach Pad (DAP)

Cu (Copper)

Backside Metal

Bare Silicon

1. The saw street is defined as the passivation−free area between

devices.

Figure 2. Die Dimensions

+

Test Pad Opening

90 mm x 90 mm

Reflective Surface

1100 mm x 1.500 mm

Submount

Pitch (Solid

Line Area)

1560 mm x

1160 mm

Stepping Size

50 mm

50 mm

Soldable DAP

1000 mm x 1000 mm

250 mm

250 mm

Figure 3. Die−Array on Wafer

+

+

+

+

Passivation−Free

Saw Street: 40 mm

Passivation−Free

Saw Street: 40 mm

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FCDN608−UBM/D

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