2

650VCoolMOS™CFD2PowerTransistor

IPL65R210CFD

Rev.2.0,2014-03-19

Final Data Sheet

ThinPAK8x8

Drain

Pin 5

Gate

Pin 1

Power

Source

Pin 3,4

Driver

Source

Pin 2

1Description

CoolMOS™isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

pioneeredbyInfineonTechnologies.650VCoolMOS™CFD2series

combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh

classinnovation.Theresultingdevicesprovideallbenefitsofafast

switchingSJMOSFETwhileofferinganextremelyfastandrobustbody

diode.Thiscombinationofextremelylowswitching,commutationand

conductionlossestogetherwithhighestrobustnessmakeespecially

resonantswitchingapplicationsmorereliable,moreefficient,lighterand

cooler.

ThinPAK

ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew

packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe

D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe

D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark

lowparasiticinductances,providesdesignerswithanewandeffectiveway

todecreasesystemsolutionsizeinpower-densitydrivendesigns.

Features

•Reducedboardspaceconsumption

•Increasedpowerdensity

•Shortcommutationloop

•Smoothswitchingwaveform

•Ultra-fastbodydiode

•Veryhighcommutationruggedness

•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss

•Easytouse/drive

•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC

(J-STD20andJESD22)

•Pb-freeplating,Halogenfreemoldcompound

Applications

650VCoolMOS™CFD2isespeciallysuitableforresonantswitching

stagesfore.g.PCSilverbox,LCDTV,Lighting,ServerandTelecom.

Table1KeyPerformanceParameters

Parameter

Value

Unit

700

V

RDS(on),max

0.21

Ω

Qg,typ

68

nC

ID,pulse

53

A

Eoss @ 400V

5.7

µJ

Body diode di/dt

900

A/µs

Qrr

0.5

µC

trr

120

ns

Irrm

7.5

A

Type/OrderingCode

Package

Marking

RelatedLinks

IPL65R210CFD

PG-VSON-4

65F6210

see Appendix A