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Document Number: 67079

S10-2605-Rev. A, 15-Nov-10

Vishay Siliconix

SiS330DN

New Product

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

V

T

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

V

0.000

0.004

0.008

0.012

0.016

0.020

012

345

67

89

10

0

20

40

60

80

100

0.001

0.01

0.1

1

10

100

Time (s)

Safe Operating Area

0.01

100

1

100

0.01

0.1

10 s

10 ms

0.1

1

10

10

Single Pulse

1ms

DC

BVDSS Limited

1s

100 ms

V

* V