SIR862DP datasheet(1/7 Pages) TFUNK

номер детали	SIR862DP

подробное описание детали	N-Channel 25-V (D-S) MOSFET

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производитель	TFUNK [Vishay Telefunken]

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Vishay Siliconix

SiR862DP

New Product

Document Number: 65672

S10-0041-Rev. A, 11-Jan-10

www.vishay.com

1

N-Channel 25-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Conversion

- Low-Side Switch

•

Notebook

•

Server

•

Game Console

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 65 °C/W.

e. Package limited.

f. See solder profile (

www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a, e

Qg (Typ.)

25

0.0028 at VGS = 10 V

50

28.4 nC

0.0035 at VGS = 4.5 V

50

Ordering Information: SiR862DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK® SO-8

Bottom View

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

25

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

50e

A

TC = 70 °C

50e

TA = 25 °C

32b, c

TA = 70 °C

22.8b, c

Pulsed Drain Current

IDM

70

Continuous Source-Drain Diode Current

TC = 25 °C

IS

50e

TA = 25 °C

4.7b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

40

Avalanche Energy

EAS

80

mJ

Maximum Power Dissipation

TC = 25 °C

PD

69

W

TC = 70 °C

44.4

TA = 25 °C

5.2b, c

TA = 70 °C

3.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)f, g

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

19

24

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.2

1.8

Аналогичный номер детали - SIR862DP

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SIR862DP	114Kb / 7P	N-Channel 25-V (D-S) MOSFET 11-Jan-10
	SIR862DP	363Kb / 13P	N-Channel 25 V (D-S) MOSFET 11-Jan-10
	SIR862DP-T1-GE3	114Kb / 7P	N-Channel 25-V (D-S) MOSFET 11-Jan-10
	SIR862DP	363Kb / 13P	N-Channel 25 V (D-S) MOSFET 11-Jan-10

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