SI4532CDY datasheet(2/15 Pages) TFUNK

2 / 15 page

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Document Number: 64805

S11-0652-Rev. B, 11-Apr-11

Vishay Siliconix

Si4532CDY

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

VGS = 0 V, ID = - 250 µA

P-Ch

- 30

VDS Temperature Coefficient

VDS/TJ

ID = 250 µA

N-Ch

mV/°C

ID = - 250 µA

P-Ch

- 33

VGS(th) Temperature Coefficient

VGS(th)/TJ

ID = 250 µA

N-Ch

- 5.8

IID = - 250 µA

P-Ch

4.5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

1.0

3.0

VDS = VGS, ID = - 250 µA

P-Ch

- 1.0

- 3.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch

100

P-Ch

- 100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

N-Ch

µA

VDS = - 30 V, VGS = 0 V

P-Ch

- 1

VDS = 30 V, VGS = 0 V, TJ = 55 °C

N-Ch

VDS = - 30 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 5

On-State Drain Currentb

ID(on)

VDS =5 V, VGS = 10 V

N-Ch

VDS = -5 V, VGS = - 10 V

P-Ch

- 12

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 3.5 A

N-Ch

0.038

0.047



VGS = - 10 V, ID = - 3.5 A

P-Ch

0.073

0.089

VGS = 4.5 V, ID = 2.8 A

N-Ch

0.052

0.065

VGS = - 4.5 V, ID = - 2.5 A

P-Ch

0.113

0.140

Forward Transconductanceb

gfs

VDS = 15 V, ID = 2.5 A

N-Ch

VDS = - 15 V, ID = - 3.5 A

P-Ch

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 15 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 15 V, VGS = 0 V, f = 1 MHz

N-Ch

305

P-Ch

340

Output Capacitance

Coss

N-Ch

P-Ch

Reverse Transfer Capacitance

Crss

N-Ch

P-Ch

Total Gate Charge

VDS = 15 V, VGS = 10 V, ID = 2.5 A

N-Ch

VDS = - 15 V, VGS = - 10 V, ID = - 2.5 A

P-Ch

7.8

N-Channel

VDS = 15 V, VGS = 4.5 V ID = 2.5 A

P-Channel

VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A

N-Ch

2.75

4.5

P-Ch

4.1

6.2

Gate-Source Charge

Qgs

N-Ch

1.3

P-Ch

1.3

Gate-Drain Charge

Qgd

N-Ch

0.9

P-Ch

1.8

Gate Resistance

f = 1 MHz

N-Ch

0.6

3.1

6.2



P-Ch

2.0

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