IPI60R099CP_15 datasheet(1/10 Pages) INFINEON

номер детали	IPI60R099CP

подробное описание детали	High peak current capability

PDF	10 Pages

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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IPI60R099CP

CoolMOS

TM Power Transistor

Features

• Worldwide best R ds,on in TO220

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching SMPS topologies for Server and Telecon

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

2)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=11 A, V DD=50 V

800

mJ

Avalanche energy, repetitive t AR

2),3)

E AR

I D=11 A, V DD=50 V

Avalanche current, repetitive t AR

2),3)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...480 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

Mounting torque

M3 and M3.5 screws

60

Ncm

Value

31

19

93

±30

255

-55 ... 150

1.2

11

50

±20

V DS @ Tj,max

650

V

R DS(on),max

0.099

Ω

Q g,typ

60

nC

Product Summary

Type

Package

Marking

IPI60R099CP

PG-TO262

6R099

P

PG-TO262-3-1

Re

v. 2.1

page 1

20

14-0528

Аналогичный номер детали - IPI60R099CP_15

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Infineon Technologies A...	IPI60R099CPA	434Kb / 11P	CoolMOS Power Transistor Rev. 2.1
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