SIA910EDJ datasheet(2/9 Pages) TFUNK

2 / 9 page

Vishay Siliconix

SiA910EDJ

www.vishay.com

Document Number: 65535

S13-0460-Rev. B, 04-Mar-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

- 2.5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = 250 µA

0.4

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 5

µA

VDS = 0 V, VGS = ± 4.5 V

± 0.5

Zero Gate Voltage Drain Current

IDSS

VDS = 12 V, VGS = 0 V

VDS = 12 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currenta

ID(on)

VDS  5 V, VGS = 4.5 V

Drain-Source On-State Resistancea

RDS(on)

VGS 4.5 V, ID = 5.2 A

0.023

0.028



VGS 2.5 V, ID = 4.8 A

0.027

0.033

VGS 1.8 V, ID = 2.5 A

0.035

0.042

Forward Transconductancea

gfs

VDS = 10 V, ID = 5.2 A

Dynamicb

Input Capacitance

Ciss

VDS = 6 V, VGS = 0 V, f = 1 MHz

455

Output Capacitance

Coss

190

Reverse Transfer Capacitance

Crss

150

Total Gate Charge

VDS = 6 V, VGS = 8 V, ID = 6.8 A

10.5

VDS = 6 V, VGS = 4.5 V, ID = 6.8 A

6.2

9.5

Gate-Source Charge

Qgs

0.8

Gate-Drain Charge

Qgd

1.6

Gate Resistance

f = 1 MHz

0.8



Turn-On Delay Time

td(on)

VDD = 6 V, RL = 1.1 

ID  5.4 A, VGEN = 4.5 V, Rg = 1 

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Turn-On Delay Time

td(on)

VDD = 6 V, RL = 1.1 

ID  5.4 A, VGEN = 10 V, Rg = 1 

510

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

4.5

Pulse Diode Forward Current

ISM

Body Diode Voltage

VSD

IS = 5.4 A, VGS 0 V

0.8

1.2

Body Diode Reverse Recovery Time

trr

IF = 5.4 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

Reverse Recovery Rise Time

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