UTT50P06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-596.C



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

Drain Current

-50 (Note 5)

A

-27.5

A

Pulsed

-80

A

Avalanche Current

-50

A

Single Pulse Avalanche Energy (Note 2)

L=0.1mH

125

mJ

Power Dissipation

TO-220

113 (Note 4)

W

TO-252

50

W

TO-262

113

W

TO-220

2.5 (Note 3, 4)

W

TO-252

1.13

W

TO-262

2.5

W

Junction Temperature

-55~+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Duty cycle≤1%.

3. When Mounted on 1" square PCB (FR-4 material).

4. See SOA curve for voltage derating.

5. Package limited.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

50

°C/W

TO-252

110

°C/W

TO-262

50

°C/W

Junction to Case

TO-220

1.1

°C/W

TO-252

2.5

°C/W

TO-262

1.1

°C/W