UT7422G-K08-3030-R datasheet(4/7 Pages) UTC

4 / 7 page

UT7422-H

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-B36.a



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

Zero Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0V

µA

VDS=30V, VGS=0V, TJ=55°C

µA

Gate-Source Leakage Current

IGSS

VGS=±20V, VDS=0V

100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1.3

1.85

2.4

On State Drain Current

ID(ON)

VGS=10V, VDS=5V

200

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=20A

3.5

4.3

mΩ

VGS=10V, ID=20A, TJ=125°C

5.5

6.8

mΩ

VGS=4.5V, ID=16A

4.5

mΩ

Forward Transconductance

gFS

VDS=5V, ID=20A

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=15V, f=1.0MHz

1950 2445 2940

Output Capacitance

COSS

270

390

510

Reverse Transfer Capacitance

CRSS

130

220

310

Gate Resistance

VDS=0V, VGS=0V, f=1.0MHz

1.2

2.4

3.6

Ω

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=15V, ID=20A

Total Gate Charge

VGS=4.5V, VDS=15V, ID=20A

Gate to Source Charge

QGS

7.2

Gate to Drain Charge

QGD

6.6

Turn-ON Delay Time

tD(ON)

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

Rise Time

Turn-OFF Delay Time

tD(OFF)

41.5

Fall-Time

10.5

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

IS=1A,VGS=0V

0.7

Maximum Body-Diode Continuous

Current (Note)

Body Diode Reverse Recovery Time

trr

IF=20A, dI/dt=500A/µs

17.5

Body Diode Reverse Recovery Charge

Qrr

Note: The maximum current rating is package limited.

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