UT4435G-S08-R datasheet(2/5 Pages) UTC

2 / 5 page

UT4435-H

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-053.B



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±20

TC=25°C

-8

Continuous

TC=100°C

-5.1

Drain Current

Pulsed (Note 1)

IDM

-32

TC=25°C

2.1

Power Dissipation

Derate above 25°C

0.017

W/°C

Junction Temperature

-55 ~ +150

°C

Storage Temperature Range

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Max. Junction to Ambient

θJA

°C/W



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-30

Breakdown Voltage Temperature

Coefficient

△

BVDSS △

/TJ Reference to 25°C, ID=-1mA

-0.03

V/°C

VDS=-30V, VGS=0V, TJ=25°C

-1

µA

Drain-Source Leakage Current

IDSS

VDS=-24V, VGS=0V, TJ=125°C

-10

µA

Forward

VGS=+20V, VDS=0V

+100

Gate-Source Leakage Current

Reverse

IGSS

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

-1.0

-1.6

-2.5

VGS(TH) Temperature Coefficient

△

VGS(TH)

VDS=VGS, ID=-250µA

mV/°C

VGS=-10V, ID=-8A

16.5

mΩ

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-5A

25.6

mΩ

Forward Transconductance

gFS

VDS=-10V, ID=-3A

6.8

DYNAMIC PARAMETERS

Input Capacitance

CISS

1250 1820

Output Capacitance

COSS

160

235

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=-15V, f=1.0MHz

130

SWITCHING PARAMETERS

Total Gate Charge (Note 2, 3)

Gate to Source Charge (Note 2, 3)

QGS

3.4

Gate to Drain Charge (Note 2, 3)

QGD

VGS=-4.5V, VDS=-15V, ID=-5A

4.2

Turn-ON Delay Time (Note 2, 3)

tD(ON)

5.8

Rise Time (Note 2, 3)

18.8

Turn-OFF Delay Time (Note 2, 3)

tD(OFF)

46.9

Fall-Time (Note 2, 3)

VDD=-15V, ID=-1A, RG=6Ω,

VGS=-10V

12.3

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

-8

Maximum Body-Diode Pulsed Current

ISM

VG=VD=0V, force current

-16

Drain-Source Diode Forward Voltage

VSD

IS=-1A, VGS=0V, TJ = 25°C

-1

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. The data tested by pulsed , pulse width≤300us, duty cycle ≤2%

3. Essentially independent of operating temperature

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